Director of Neuro-inspired Computing Devices & Stacks Realization
Millipore Corporation

Job Info

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As Director of Neuro-inspired Computing Devices and Stacks Realization, you will join our team to understand how novel devices, integration schemes and stacks impact materials performance to enable neuro-inspired computing and in-memory computing architectures. This is a senior and impactful management position with accountability for the technical management of all technical research involved with device optimization, electrical testing and film stack/materials development to meet leading edge neuro-inspired computing key performance indices. Strong teamwork, team building skills, problem-solving acumen and ability to effectively work in collaborative/matrixed organizations are required for the development of these novel and exciting device solutions. You will be based at our Silicon Valley hub located in San Jose, CA to realize our ambitions in an inspiring and enabling neuro-inspired computing ecosystem. Your TasksMastermind and execute to the device and stacks development strategyManaging a team of highly skilled device engineers to electrically characterize and develop semiconductor device materials, neuro-inspired stacks and structures, based on single or multi-layer films and to meet specific key parameter indices (KPIs).Understand physics of materials/interfaces and how they determine their electrical, ferroelectric, electromagnetic, spintronic, and photonic properties - use this understanding to tailor materials for device realizationBe the device technology evangelist to interface with partners and customers and comprehend their technical issues and roadmaps to drive appropriate solutions and establish technical credibility across the organization and with external collaboratorsWork closely with other process and integration engineers, and materials scientists to drive development activities and provide guidance and expertise in the area of device development towards project timelinesMastermind a portfolio of next-gen memory materials and devices ranging from ferroelectrics, phase change, to resistive conceptsBuild and manage high performance teams aiming at substantial business impact

Who you are:

Minimum Qualifications:

a MS degree in Electrical Engineering, Physics, or Materials Science8+ years professional experience in a semiconductor, memory development, ferro electric devices and/or related fields

Preferred Qualifications:

a PhD in Electrical Engineering, Physics, or Materials Science a proven track record to solve complex analytical problems and provide robust and high technical quality solutions in a timely mannera proven ability to engage with partners and effectively manage device engineering needs on a highly technical basisan understanding of memory technology and/or advanced memory process, materials, device and reliability performanceexpertise with common electrical characterization techniques and state-of-the-industry modelling toolsare a strategic thinker capable of drawing the big picturea pioneering, hands-on personality and have an appetite for starting a strategic activity within a corporate settingself-motivated, results-oriented with high commitment to technical quality in a fast paced environment Pay Range for this position: $109,400 - $328,200 Our ranges incorporate all levels and career types available within this specific role, and are derived from relevant industry market data. Should we decide to make an offer, we will consider several factors, including but not limited to your location, skills, experience, career level, and other job-related factors. This role may offer the following benefits: medical, vision, and dental insurance; life insurance; disability insurance; a 401(k) matching program; paid time off; and paid holidays; among other employee benefits. This role may also be eligible for short-term or long-term incentive compensation, including, but not limited to, cash bonuses.

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